公开(公告)号：US20240347609A1

公开(公告)日：2024-10-17

申请号：US18500499

申请日：2023-11-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGHOON HWANG ,  HYOJIN KIM ,  BYUNGHO MOON ,  MYUNGIL KANG ,  WOOSEOK PARK ,  JAEHO JEON

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate including an active pattern, first and second source/drain patterns overlapping with the active pattern, a separation insulating layer between the first and second source/drain patterns, and first and second gate electrodes spaced apart from each other with the separation insulating layer interposed therebetween. A level of a top surface of the separation insulating layer is higher than a level of a top surface of the first gate electrode and a level of a top surface of the second gate electrode.