公开(公告)号：US20240038319A1

公开(公告)日：2024-02-01

申请号：US18222563

申请日：2023-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAMHYUNG KIM ,  DAEJEONG KIM ,  DOHAN KIM ,  DEOKHO SEO ,  JAEIN SONG ,  INSU CHOI

IPC: G11C29/44 ,  G11C29/12 ,  G11C29/02

CPC classification number: G11C29/44 ,  G11C29/1201 ,  G11C29/027

Abstract: A memory system including a memory device that receives a plurality of signals including a post package repair (PPR) command from a host, wherein the memory device includes a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a plurality of redundancy memory cells connected to one or more redundancy word lines and the plurality of bit lines, and anti-fuse memory cells, and a PPR control circuit that transmits to the host whether a PPR operation on a defective memory cell of the memory cell array has passed.