公开(公告)号：US20240078027A1

公开(公告)日：2024-03-07

申请号：US18238819

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KUI-YON MUN ,  JOOYOUNG HWANG ,  Gyeongmin KIM ,  KEUNSAN PARK ,  JOON-WHAN BAE

IPC: G06F3/06

CPC classification number: G06F3/0631 ,  G06F3/0608 ,  G06F3/0652 ,  G06F3/0679

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, select two or more erase units from among a plurality of erase units included in the plurality of memory cells to be allocated to each of the plurality of zones based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, wherein the nonvolatile memory device includes a plurality of memory chips, wherein each memory chip of the plurality of memory chips includes a plurality of memory blocks, wherein each memory block of the plurality of memory blocks includes at least two erase units, and wherein the controller is further configured to select at least one erase unit from the each memory block to be allocated to a zone.