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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240413203A1

    公开(公告)日：2024-12-12

    申请号：US18543414

    申请日：2023-12-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang Min YOE ,  Ji Wang KO ,  Jae Hong CHOI ,  Jun Ho HONG ,  Dong Min KIM ,  Jeong Min CHOI

    IPC: H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    Abstract: A semiconductor device includes a substrate. An active pattern is on the substrate and extends in a first horizontal direction. First to third nanosheets are sequentially stacked on the active pattern and are spaced apart from each other in a vertical direction. A gate electrode is on the active pattern and extends in a second horizontal direction. The gate electrode surrounds each of the first to third nanosheets. A source/drain region is on the active pattern on at least one side of the gate electrode. An interlayer insulating layer covers the source/drain region. A source/drain contact penetrates the interlayer insulating layer in the vertical direction and is connected to the source/drain region. At least a portion of the interlayer insulating layer is disposed between sidewalls of the source/drain contact and the source/drain region in the first horizontal direction and overlaps sidewalls of the third nanosheet along the first horizontal direction.

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