Method of fabricating semiconductor device

    公开(公告)号:US11974433B2

    公开(公告)日:2024-04-30

    申请号:US17575947

    申请日:2022-01-14

    CPC classification number: H10B43/27 H10B43/35

    Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20220037316A1

    公开(公告)日:2022-02-03

    申请号:US17334589

    申请日:2021-05-28

    Abstract: A semiconductor device includes an active region that extends in a first direction and has a first width in a second direction that intersects the first direction, a first gate structure disposed on the active region that has a second width in the first direction and extends in the second direction, a first metal contact spaced apart from the first gate structure in the first direction, a first trench formed in the active region, and an insulating material that fills the first trench and forms a first active cut, wherein the first active cut defines a first metal region in the active region in which the first metal contact is located, and the first metal contact is placed off-center inside the first metal region and a length of a region where the first gate structure and the active region overlap is greater than that of the first and second trenches.

    Semiconductor memory device and method for fabricating the same

    公开(公告)号:US11227870B2

    公开(公告)日:2022-01-18

    申请号:US16739392

    申请日:2020-01-10

    Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

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