公开(公告)号：US20200350312A1

公开(公告)日：2020-11-05

申请号：US16935487

申请日：2020-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi-Chan Jun ,  Heon-jong Shin ,  In-chan Hwang ,  Jae-ran Jang

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/265 ,  H01L27/02 ,  H01L21/762 ,  H01L21/761 ,  H01L23/528 ,  H01L29/78

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gale line. An insulating cover extends parallel to the substrate with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US20220208966A1

公开(公告)日：2022-06-30

申请号：US17699609

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi-Chan JUN ,  Heon-jong Shin ,  In-Chan Hwang ,  Jae-ran Jang

IPC: H01L29/06 ,  H01L29/417 ,  H01L27/088 ,  H01L29/78

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US10665588B2

公开(公告)日：2020-05-26

申请号：US15808865

申请日：2017-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwi-chan Jun ,  Heon-jong Shin ,  In-chan Hwang ,  Jae-ran Jang

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/265 ,  H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/02 ,  H01L21/762 ,  H01L21/761 ,  H01L23/528 ,  H01L29/78

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US11769769B2

公开(公告)日：2023-09-26

申请号：US17699609

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi-Chan Jun ,  Heon-jong Shin ,  In-chan Hwang ,  Jae-ran Jang

IPC: H01L27/088 ,  H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/265 ,  H01L27/02 ,  H01L21/762 ,  H01L21/761 ,  H01L23/528 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/26513 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76877 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/528 ,  H01L27/0207 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/6656 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/7854

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US11316010B2

公开(公告)日：2022-04-26

申请号：US17038217

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi-Chan Jun ,  Heon-jong Shin ,  In-chan Hwang ,  Jae-ran Jang

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L27/088

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gale line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.

公开(公告)号：US10763256B2

公开(公告)日：2020-09-01

申请号：US16840322

申请日：2020-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwi-chan Jun ,  Heon-jong Shin ,  In-chan Hwang ,  Jae-ran Jang

IPC: H01L27/088 ,  H01L29/66 ,  H01L23/528 ,  H01L21/761 ,  H01L21/762 ,  H01L27/02 ,  H01L21/265 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/08 ,  H01L29/78

Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.