公开(公告)号：US09627492B2

公开(公告)日：2017-04-18

申请号：US14964758

申请日：2015-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minhwan Kim ,  Jaehyun Jung ,  Jungkyung Kim ,  Kyuok Lee ,  Jaejune Jang ,  Changki Jeon ,  Suyeon Cho ,  Seonghoon Ko ,  Kyu-Heon Cho

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/402 ,  H01L29/0653 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66689 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.

公开(公告)号：US09105607B2

公开(公告)日：2015-08-11

申请号：US14212663

申请日：2014-03-14

Applicant: SAMSUNG ELECTRONICS Co., Ltd.

Inventor： Jaejune Jang ,  JaeHyun Jung

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/04 ,  H01L29/06 ,  H01L21/8238 ,  H01L27/02 ,  H01L29/165

CPC classification number: H01L29/4238 ,  H01L21/823807 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/78 ,  H01L29/7833 ,  H01L29/7842

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a mesh-type gate electrode including first portions extending in a first direction and second portions extending in a second direction crossing the first direction over the substrate. The mesh-type gate structure may have a plurality of openings, and source regions and drain regions of second conductivity type alternately arranged in the first direction and the second direction in the substrate at locations corresponding to the openings.

Abstract translation: 半导体器件包括第一导电类型的半导体衬底，包括在第一方向上延伸的第一部分的第二部分和在与衬底上的第一方向交叉的第二方向延伸的第二部分的网状栅电极。 网状栅极结构可以具有多个开口，并且第二导电类型的源极区域和漏极区域在与开口对应的位置处在基板的第一方向和第二方向上交替布置。