公开(公告)号：US10026749B2

公开(公告)日：2018-07-17

申请号：US15349084

申请日：2016-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Park ,  Jaeshin Park ,  Joyoung Park ,  Jiwoong Sue ,  Seok-Won Lee

IPC: H01L29/76 ,  H01L27/11582 ,  H01L21/768 ,  H01L23/528 ,  H01L27/02 ,  H01L29/06 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575

Abstract: A semiconductor memory device includes a substrate that includes a first cell array region and a peripheral region, a plurality of stack structures that extend in the first direction on the first cell array region and are spaced apart from each other in a second direction crossing the first direction, an insulation layer that covers the stack structures, and at least one separation structure that extends in the second direction on the peripheral region and penetrates the insulation layer in a direction normal to a top surface of the substrate.