公开(公告)号：US11183526B2

公开(公告)日：2021-11-23

申请号：US16701750

申请日：2019-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Ho Ro ,  Doowon Kwon ,  Seokjin Kwon ,  Jameyung Kim ,  Jinyoung Kim ,  Sungki Min ,  Kwansik Cho ,  Mangeun Cho ,  Ho-Chul Ji

IPC: H01L21/00 ,  H01L27/146

Abstract: An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

公开(公告)号：US20240162256A1

公开(公告)日：2024-05-16

申请号：US18344398

申请日：2023-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungeun Chang ,  Sungin Kim ,  Jameyung Kim ,  Incheol Cho

IPC: H01L27/146 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L27/14614 ,  H01L29/1033 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238

Abstract: Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, and a gate electrode on the active region, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, wherein the gate electrode includes a lateral gate portion on a portion of the top surface of the active region, a vertical gate portion on a sidewall of the active region, and a round inner corner portion integrally connected to the lateral gate portion and the vertical gate portion, the round inner corner portion facing the local round edge portion.

公开(公告)号：US11881496B2

公开(公告)日：2024-01-23

申请号：US17246064

申请日：2021-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jameyung Kim ,  Tae-Hun Lee ,  Dongmo Im ,  Kwansik Cho

IPC: H01L31/112 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.

公开(公告)号：US12170298B2

公开(公告)日：2024-12-17

申请号：US17562125

申请日：2021-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jameyung Kim ,  Sungin Kim ,  Dongmo Im

IPC: H01L27/14 ,  H01L27/146

Abstract: An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.

公开(公告)号：US20240355841A1

公开(公告)日：2024-10-24

申请号：US18761524

申请日：2024-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungeun Chang ,  Sungin Kim ,  Jameyung Kim ,  Incheol Cho

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643

Abstract: Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, a gate electrode on the active region, and a source region and a drain region formed in the active region on both sides of the gate electrode, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, and a distance from the local round edge portion to the drain region is less than a distance from the local round edge portion to the source region, wherein the gate electrode includes a round inner corner portion facing the local round edge portion.