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    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME
    2.
    发明公开
    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20230343800A1

    公开(公告)日：2023-10-26

    申请号：US18093609

    申请日：2023-01-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoungeun CHANG ,  Sungin Kim ,  Seonghoon Ko ,  Donghyun Kim ,  Wook Lee

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14643 ,  H01L27/1463 ,  H01L27/14689

    Abstract: An image sensor includes a substrate having a pixel region in which an active region having a locally asymmetric fin region limited by a locally cutout space is defined and a transistor provided in the pixel region. The transistor includes a horizontal gate portion provided on the active region and a vertical gate portion filling the locally cutout space and facing one of fin sidewalls of the locally asymmetric fin region. Distances of the source region and drain region formed in the active region from the locally asymmetric fin region are different from each other. An electronic system includes at least one camera module including an image sensor and a processor configured to process image data provided from the at least one camera module.

    IMAGE SENSORS HAVING HIGHLY INTEGRATED PIXELS THEREIN WITH SHARED ELEMENTS
    3.
    发明公开
    IMAGE SENSORS HAVING HIGHLY INTEGRATED PIXELS THEREIN WITH SHARED ELEMENTS 审中-公开

    公开(公告)号：US20240243151A1

    公开(公告)日：2024-07-18

    申请号：US18410884

    申请日：2024-01-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junghye Kim ,  Gilwoo Kong ,  Donghyun Kim ,  Sungin Kim

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H04N25/77

    Abstract: An image sensor includes a substrate and first and second shared pixels, which extend adjacent to each other in a first direction across the substrate. Each of the shared pixels includes: a plurality of floating diffusion regions at spaced apart locations within the substrate, and a plurality of spaced-apart source follower gates electrically connected to the plurality of floating diffusion regions. A deep trench isolation structure is provided, which extends within the substrate and at least partially partitions the first and second shared pixels from each other. A contact barrier structure is provided, which extends on the substrate, vertically overlaps the deep trench isolation structure, at least partially partitions the first and second shared pixels from each other, and is arranged with a long axis in a second direction orthogonal to the first direction and between the source follower gate of the first shared pixel and the source follower gate of the second shared pixel.

    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME
    6.
    发明公开
    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240162256A1

    公开(公告)日：2024-05-16

    申请号：US18344398

    申请日：2023-06-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyoungeun Chang ,  Sungin Kim ,  Jameyung Kim ,  Incheol Cho

    IPC: H01L27/146 ,  H01L29/10 ,  H01L29/423

    CPC classification number: H01L27/14614 ,  H01L29/1033 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238

    Abstract: Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, and a gate electrode on the active region, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, wherein the gate electrode includes a lateral gate portion on a portion of the top surface of the active region, a vertical gate portion on a sidewall of the active region, and a round inner corner portion integrally connected to the lateral gate portion and the vertical gate portion, the round inner corner portion facing the local round edge portion.

    Electronic device for supporting data communication and method therefor
    7.
    发明授权
    Electronic device for supporting data communication and method therefor 有权

    公开(公告)号：US11039493B2

    公开(公告)日：2021-06-15

    申请号：US16522000

    申请日：2019-07-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaekwang Han ,  Sungin Kim ,  Hongshik Kim ,  Seonghan Park ,  Ansik Shin ,  Euisung Lee

    IPC: H04W76/15 ,  H04W88/06 ,  H04W88/16

    Abstract: An electronic device is provided. The electronic device includes a communication circuitry, a processor, and a memory. The memory stores instructions that, when executed, cause the processor to obtain application information comprising information of at least one application configured to perform data communication using a first packet data network (PDN), establish a first PDN connection to the first PDN and a second PDN connection to a second PDN using the communication circuitry, determine whether a first application, which requests data transmission through the second PDN connection, is an application included in the application information, when the first application is included in the application information, transmit data associated with the first application to the first PDN, and, when the first application is not included in the specified application information, and transmit the data associated with the first application to the second PDN.

    Image sensor including a photodiode
    8.
    发明授权
    Image sensor including a photodiode 有权

    公开(公告)号：US12170298B2

    公开(公告)日：2024-12-17

    申请号：US17562125

    申请日：2021-12-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jameyung Kim ,  Sungin Kim ,  Dongmo Im

    IPC: H01L27/14 ,  H01L27/146

    Abstract: An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.

    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME
    9.
    发明公开
    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240355841A1

    公开(公告)日：2024-10-24

    申请号：US18761524

    申请日：2024-07-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyoungeun Chang ,  Sungin Kim ,  Jameyung Kim ,  Incheol Cho

    IPC: H01L27/146

    CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643

    Abstract: Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, a gate electrode on the active region, and a source region and a drain region formed in the active region on both sides of the gate electrode, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, and a distance from the local round edge portion to the drain region is less than a distance from the local round edge portion to the source region, wherein the gate electrode includes a round inner corner portion facing the local round edge portion.

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