公开(公告)号：US20130258771A1

公开(公告)日：2013-10-03

申请号：US13790409

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Hyun Lee ,  Jee-Yeon Kang ,  Dong-Hoon Jang ,  Jung-Dal Choi

IPC: G11C16/24

CPC classification number: G11C16/24 ,  G11C16/0483 ,  G11C16/10

Abstract: In method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, a first channel of the first cell string and a second channel of the second cell string are precharged by applying a first voltage to the bitline, one cell string is selected from the first and second cell strings, and a memory cell included in the selected cell string is programmed by applying a second voltage greater than a ground voltage and less than the first voltage to the bitline.

Abstract translation: 在编程包括耦合到一个位线的第一和第二单元串的非易失性存储器件的方法中，通过向位线施加第一电压来预充电第一单元串的第一通道和第二单元串的第二通道，一个 从第一和第二单元串中选择单元串，并且通过向位线施加大于接地电压并小于第一电压的第二电压来对包括在所选单元串中的存储单元进行编程。

公开(公告)号：US09159432B2

公开(公告)日：2015-10-13

申请号：US13790409

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Hyun Lee ,  Jee-Yeon Kang ,  Dong-Hoon Jang ,  Jung-Dal Choi

IPC: G11C16/24 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C16/24 ,  G11C16/0483 ,  G11C16/10

Abstract: In method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, a first channel of the first cell string and a second channel of the second cell string are precharged by applying a first voltage to the bitline, one cell string is selected from the first and second cell strings, and a memory cell included in the selected cell string is programmed by applying a second voltage greater than a ground voltage and less than the first voltage to the bitline.

Abstract translation: 在编程包括耦合到一个位线的第一和第二单元串的非易失性存储器件的方法中，通过向位线施加第一电压来预充电第一单元串的第一通道和第二单元串的第二通道，一个 从第一和第二单元串中选择单元串，并且通过向位线施加大于接地电压并小于第一电压的第二电压来对包括在所选单元串中的存储单元进行编程。