公开(公告)号：US11637117B2

公开(公告)日：2023-04-25

申请号：US17032277

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojoon Ryu ,  Kwanyong Kim ,  Seogoo Kang ,  Sunil Shim ,  Wonseok Cho ,  Jeehon Han

IPC: H01L27/1157 ,  H01L23/522 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/11565

Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.