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    ESD PROTECTION CIRCUITRY, AND ELECTRONIC DEVICE INCLUDING ESD PROTECTION CIRCUITRY
    1.
    发明公开
    ESD PROTECTION CIRCUITRY, AND ELECTRONIC DEVICE INCLUDING ESD PROTECTION CIRCUITRY 审中-公开

    公开(公告)号：US20240321866A1

    公开(公告)日：2024-09-26

    申请号：US18614152

    申请日：2024-03-22

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hyunsuk KANG ,  Jehoon KIM ,  Jungjune PARK ,  Chiweon YOON

    IPC分类号： H01L27/02 ,  H02H9/04

    CPC分类号： H01L27/0285 ,  H02H9/046

    摘要： An electrostatic discharge protection circuit includes an NMOS transistor connected to a supply voltage pin through a first node and connected to a ground pin through a second node, an RC circuit connected in parallel with the NMOS transistor and including a capacitor and a resistor, and a clamping circuit connected in parallel with the resistor of the RC circuit and including a plurality of diodes; and a switch connecting the clamping circuit to a gate node of the NMOS transistor, wherein a number of the plurality of diodes is set based on a breakdown voltage and an operating voltage of an internal circuit to be protected by the ESD protection circuit, and the switch includes a PMOS transistor connecting the gate node of the NMOS transistor to the clamping circuit and a sub-RC circuit connected in parallel with the PMOS transistor and including a sub-capacitor and a sub-resistor.