公开(公告)号：US09842182B2

公开(公告)日：2017-12-12

申请号：US14845556

申请日：2015-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hoon Baek ,  Tae-Joong Song ,  Gi-Young Yang ,  Jeong-Ho Do

IPC: G06F17/50 ,  H01L29/66

CPC classification number: G06F17/5072 ,  G06F17/5081 ,  H01L29/6681

Abstract: A method of designing a semiconductor device and system for designing a semiconductor device are provided. The method of designing a semiconductor device includes providing a standard cell layout which includes an active region and a dummy region; determining a first fin pitch between a first active fin and a second active fin in the active region and a second fin pitch between a first dummy fin and a second dummy fin in the dummy region; placing the first and second active fins in the active region and the first and second dummy fins in the dummy region using the first and second fin pitches; and verifying the standard cell layout.