METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

    公开(公告)号:US20210098260A1

    公开(公告)日:2021-04-01

    申请号:US16858591

    申请日:2020-04-25

    Abstract: In order to manufacture an integrated circuit device, a feature layer is formed on a substrate in a first area for forming a plurality of chips and in a second area surrounding the first area. The feature layer has a step difference in the second area. On the feature layer, a hard mask structure including a plurality of hard mask layers stacked on each other is formed. In the first area and the second area, a protective layer covering the hard mask structure is formed. On the protective layer, a photoresist layer is formed. A photoresist pattern is formed by exposing and developing the photoresist layer in the first area by using the step difference in the second area as an alignment key.

Patent Agency Ranking