公开(公告)号：US12230321B2

公开(公告)日：2025-02-18

申请号：US17830004

申请日：2022-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Hoon Chun ,  Jiho Song ,  Yoonmyung Lee ,  Jua Lee

IPC: G11C13/00 ,  G11C11/16 ,  G11C11/54

Abstract: A device with a neural network includes: a synaptic memory cell comprising a resistive memory element, which is disposed along an output line and which has either one of a first resistance value and a second resistance value, and configured to generate a column signal based on the resistive memory element and an input signal in response to the input signal being received through an input line; a reference memory cell comprising a reference memory element, which is disposed along a reference line and which has the second resistance value different from the first resistance value, and configured to generate a reference signal based on the reference memory element and the input signal; and an output circuit configured to generate an output signal for the output line from the column signal and the reference signal.