公开(公告)号：US10474034B2

公开(公告)日：2019-11-12

申请号：US15916437

申请日：2018-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Il-yong Jang ,  Hyung-ho Ko ,  Jin-sang Yoon

IPC: G03F1/32 ,  G03F7/22 ,  G03F1/42 ,  G03F7/20

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.

公开(公告)号：US09989857B2

公开(公告)日：2018-06-05

申请号：US14849006

申请日：2015-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Il-yong Jang ,  Hyung-ho Ko ,  Jin-sang Yoon

IPC: G03F7/22 ,  G03F1/32 ,  G03F1/42 ,  G03F7/20

CPC classification number: G03F7/22 ,  G03F1/32 ,  G03F1/42 ,  G03F7/203

Abstract: A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.