公开(公告)号：US20220223636A1

公开(公告)日：2022-07-14

申请号：US17570884

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon KIM ,  Jinju JEON ,  Heegeun JEONG

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor including: a semiconductor substrate having a first surface and a second surface; a pixel device isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the pixel device isolation film defines pixels in the semiconductor substrate, and includes a conductive layer; and a device isolation structure located inside a device isolation trench that extends from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the device isolation structure includes a conductive liner electrically connected to the conductive layer, wherein a negative bias is applied to the conductive layer and the conductive liner.

公开(公告)号：US20220415954A1

公开(公告)日：2022-12-29

申请号：US17836108

申请日：2022-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinju JEON ,  Youngwoo CHUNG ,  Hanseok KIM ,  Heegeun JEONG

IPC: H01L27/146

Abstract: An image sensor includes: a first semiconductor chip having a pixel region, a peripheral region, and a first wiring layer; and a second semiconductor chip combined with the first semiconductor chip, and including a second wiring layer, wherein the pixel region includes an active pixel region and a dummy pixel region, wherein the pixels are separated from one another by deep trench isolations (DTI) passing through a silicon layer, wherein a backside contact applying a negative (−) voltage to a conductive layer of each of the DTIs is arranged in the dummy pixel region and passes through the silicon layer, wherein the backside contact contacts the conductive layer of each of the DTIs, and wherein a through via is formed in the peripheral region, and wiring lines of the first wiring layer are connected to wiring lines of a second wiring layer through the through via.