公开(公告)号：US20220208296A1

公开(公告)日：2022-06-30

申请号：US17540535

申请日：2021-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinmin SEOK ,  Jonghwa KIM

IPC: G11C29/44 ,  G11C16/04 ,  G11C16/10 ,  G11C11/56

Abstract: Provided are a memory device and a memory controller, which are configured to repair a weak word line, and a method of operating a storage device including the memory device and the memory controller. A memory device includes a memory cell array including a plurality of normal word lines and at least one spare word line, and a repair controller configured to set memory cells connected to at least one weak word line to a first operation mode and further configured to set memory cells connected to the at least one spare word line to a second operation mode. The at least one weak word line is detected from among the normal word lines based on a test result.