公开(公告)号：US10121660B2

公开(公告)日：2018-11-06

申请号：US15428365

申请日：2017-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： So Young Lee ,  Hyun Su Kim ,  Jong Won Hong

IPC: H01L21/033 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/311 ,  H01L21/027 ,  H01L23/544 ,  H01L23/522 ,  H01L21/308

Abstract: A method of fabricating a semiconductor device includes forming a metal film including Cu on a substrate, forming a protective film on the metal film, forming a hard mask including TaOx, where x is 2.0 to 2.5, on the protective film, forming a hard mask pattern by patterning the hard mask, and forming a metal wiring by patterning the metal film, using the hard mask pattern as an etching mask.