公开(公告)号：US20180130932A1

公开(公告)日：2018-05-10

申请号：US15863724

申请日：2018-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon Woo JEON ,  Sang Seok LEE ,  Hyun Kwon HONG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.

公开(公告)号：US20180040788A1

公开(公告)日：2018-02-08

申请号：US15443202

申请日：2017-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon Woo JEON ,  Sang Seok LEE ,  Hyun Kwon HONG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/44 ,  H01L33/24

CPC classification number: H01L33/62 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and an insulating layer on the light emitting structure and including first and second through-holes. The insulating layer includes a first lower insulating layer and a second lower insulating layer. The first insulating layer is disposed on the first conductivity-type semiconductor layer and is surrounded by the second lower insulating layer with the first through-hole interposed therebetween.