公开(公告)号：US12009299B2

公开(公告)日：2024-06-11

申请号：US18137733

申请日：2023-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hyuk Choi ,  Wonchul Lee ,  Joonhyoung Yang

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L23/528 ,  H01L29/06

CPC classification number: H01L23/528 ,  H01L23/5226 ,  H01L29/0649

Abstract: A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.

公开(公告)号：US20240282703A1

公开(公告)日：2024-08-22

申请号：US18652628

申请日：2024-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hyuk Choi ,  Wonchul Lee ,  Joonhyoung Yang

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/06

CPC classification number: H01L23/528 ,  H01L23/5226 ,  H01L29/0649

Abstract: A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.

公开(公告)号：US11670591B2

公开(公告)日：2023-06-06

申请号：US17404757

申请日：2021-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hyuk Choi ,  Wonchul Lee ,  Joonhyoung Yang

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/528 ,  H01L29/06 ,  H01L23/522

CPC classification number: H01L23/528 ,  H01L23/5226 ,  H01L29/0649

Abstract: A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.