公开(公告)号：US20210384137A1

公开(公告)日：2021-12-09

申请号：US17147661

申请日：2021-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-IL CHOI ,  Gyuho KANG ,  Seong-Hoon BAE ,  Dongjoon OH ,  Chungsun LEE ,  Hyunsu HWANG

IPC: H01L23/532 ,  H01L23/00 ,  H01L23/522 ,  H01L23/48

Abstract: A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.