公开(公告)号：US20230352591A1

公开(公告)日：2023-11-02

申请号：US17989944

申请日：2022-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deok Han BAE ,  Myung Yoon UM ,  Yu Ri LEE ,  Sun Me LIM ,  Jun Su JEON

IPC: H01L29/78 ,  H01L29/417 ,  H01L23/528 ,  H01L23/522 ,  H01L27/088

CPC classification number: H01L29/7851 ,  H01L29/41791 ,  H01L23/5283 ,  H01L23/5226 ,  H01L27/0886

Abstract: A semiconductor device includes an isolation structure having first and second sidewalls opposite each other, a first fin-shaped pattern in contact with the first sidewall and extending in the second direction, a second fin-shaped pattern in contact with the second sidewall and extending in the second direction, a first gate electrode on the first fin-shaped pattern, a first source/drain contact on the first and second fin-shaped patterns and extending between the first gate electrode and the element isolation structure, and a wiring structure on and connected to the first source/drain contact, wherein the first source/drain contact includes a lower contact intersecting the first and second fin-shaped patterns, an upper contact protruding from the lower contact, and a dummy contact, the wiring structure being in contact with the upper contact and not with the dummy contact.