公开(公告)号：US20130307110A1

公开(公告)日：2013-11-21

申请号：US13893592

申请日：2013-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doo-Won KWON ,  June-Mo KOO ,  Yun-Ki LEE ,  Se-Hoon JANG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.

Abstract translation: 半导体器件包括：基板，其包括前侧和与前侧相反的背面;位于基板的背面相邻且间隔开的第一P型区域，位于第一P- 并且在基板中彼此间隔开，并且位于相邻于背侧且位于第一P型区域之间的第二P型区域。