公开(公告)号：US11289334B2

公开(公告)日：2022-03-29

申请号：US16551930

申请日：2019-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-A Lee ,  Yeonsook Kim ,  Inji Lee

IPC: H01L29/167 ,  H01L21/02 ,  H01L21/225 ,  H01L21/306 ,  H01L21/324 ,  H01L21/322 ,  H01L27/146

Abstract: An epitaxial wafer and a method of fabricating an epitaxial wafer, the method including providing a semiconductor substrate doped with both boron and germanium such that a sum of boron concentration and germanium concentration is at least 8.5E+18 atoms/cm3 and the germanium concentration is 6 times or less the boron concentration; forming an epitaxial layer on the semiconductor substrate such that the semiconductor substrate and the epitaxial layer constitute the epitaxial wafer; and annealing the epitaxial wafer for 1 hour or longer at a temperature of 1,000° C. or less.

公开(公告)号：US11640943B2

公开(公告)日：2023-05-02

申请号：US17464151

申请日：2021-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-A Lee ,  Yeon Sook Kim ,  Han Byul Jang

IPC: H01L23/544 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor wafer includes a wafer body including an active layer having a first crystal orientation and having first and second surfaces opposing each other, and a support layer having a second crystal orientation different from the first crystal orientation and having third and fourth surfaces opposing each other, a bevel portion that extends along an outer periphery of the wafer body to connect the first surface to the fourth surface, and a notch portion formed at a predetermined depth in a direction from the outer periphery of the wafer body toward a center portion of the wafer body. The bevel portion includes a first beveled surface connected to the first surface and a second beveled surface connected to the fourth surface. The first beveled surface has a width in a radial direction of the wafer body that is 300 μm or less.