公开(公告)号：US11640943B2

公开(公告)日：2023-05-02

申请号：US17464151

申请日：2021-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-A Lee ,  Yeon Sook Kim ,  Han Byul Jang

IPC: H01L23/544 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor wafer includes a wafer body including an active layer having a first crystal orientation and having first and second surfaces opposing each other, and a support layer having a second crystal orientation different from the first crystal orientation and having third and fourth surfaces opposing each other, a bevel portion that extends along an outer periphery of the wafer body to connect the first surface to the fourth surface, and a notch portion formed at a predetermined depth in a direction from the outer periphery of the wafer body toward a center portion of the wafer body. The bevel portion includes a first beveled surface connected to the first surface and a second beveled surface connected to the fourth surface. The first beveled surface has a width in a radial direction of the wafer body that is 300 μm or less.

公开(公告)号：US20230215919A1

公开(公告)日：2023-07-06

申请号：US18085699

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin Kim ,  Yeon Sook Kim ,  Yoon-Hee Lee

IPC: H01L29/10 ,  H01L27/088

CPC classification number: H01L29/1083 ,  H01L27/088 ,  H01L29/0673

Abstract: A semiconductor substrate includes a base substrate, a first epitaxial layer having a first conductivity type on the base substrate, a second epitaxial layer having the first conductivity type on the first epitaxial layer, a first well region having a second conductivity type different from the first conductivity type, in the first epitaxial layer and the second epitaxial layer, and a second well region which is spaced apart from the first well region and has the second conductivity type, in the first epitaxial layer and the second epitaxial layer, wherein a doping concentration of the first epitaxial layer is greater than a doping concentration of the second epitaxial layer, and a depth of each of the first well region and the second well region is greater than a thickness of the second epitaxial layer.

公开(公告)号：US20230187463A1

公开(公告)日：2023-06-15

申请号：US18060180

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Yun Park ,  Yeon Sook Kim ,  In Ji Lee ,  Tae Young Song

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor substrate includes a semiconductor substrate layer and a semiconductor epitaxial layer on the substrate layer. The semiconductor substrate layer has a boron (B) doping concentration therein in a range from 3×1018 cm−3 to 1×1019 cm−3, whereas the semiconductor epitaxial layer has a boron (B) doping concentration therein in a range from 1×1016 cm−3 to 6×1016 cm−3.