公开(公告)号：US20200373387A1

公开(公告)日：2020-11-26

申请号：US16993514

申请日：2020-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Han LEE ,  Jae-Hwan LEE ,  Sang-Su KIM ,  Hwan-Wook CHOI ,  Tae-Jong LEE ,  Seung-Mo HA

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

公开(公告)号：US20200091286A1

公开(公告)日：2020-03-19

申请号：US16694031

申请日：2019-11-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Han LEE ,  Jae-Hwan LEE ,  Sang-Su KIM ,  Hwan-Wook CHOI ,  Tae-Jong LEE ,  Seung-Mo HA

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.