公开(公告)号：US20230156360A1

公开(公告)日：2023-05-18

申请号：US17978568

申请日：2022-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yooseung JUNG ,  Seokyong HONG ,  Junyoung KIL

IPC: H04N5/369 ,  H04N5/232 ,  H04N5/243 ,  H04N5/235

CPC classification number: H04N5/36961 ,  H04N5/23212 ,  H04N5/243 ,  H04N5/2353

Abstract: Provided is an image sensor and an operation method of the image sensor. The image sensor includes a pixel array including a plurality of white pixels, a plurality of color pixels, and a plurality of auto focus (AF) pixels, a first shared pixel including the plurality of white pixels and the plurality of color pixels includes a first conversion gain transistor and a second conversion gain transistor configured to control a conversion gain of the first shared pixel, and a second shared pixel including some of the plurality of white pixels and the plurality of color pixels and at least one AF pixel includes a third conversion gain transistor and a fourth conversion gain transistor configured to control a conversion gain of the second shared pixel. The first conversion gain transistor, the second conversion gain transistor, the third conversion gain transistor, and the fourth conversion gain transistor are connected to different conversion gain control lines, respectively.

公开(公告)号：US20240365026A1

公开(公告)日：2024-10-31

申请号：US18383070

申请日：2023-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yooseung JUNG ,  Seokyong HONG ,  Jahyun KOO ,  Junyoung KIL ,  Dahsom KIM

IPC: H04N25/78 ,  H04N25/709 ,  H04N25/76 ,  H04N25/77

CPC classification number: H04N25/78 ,  H04N25/709 ,  H04N25/77 ,  H04N25/7795

Abstract: An image sensor device includes a first pixel located at a first row, a first select transistor, a second pixel located at a second row, a second select transistor, the second row being different from the first row, and a column line connected to both the first pixel and the second pixel, and during a first time period, a floating diffusion node of the first pixel is reset, and during a second time period, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor, the second time period is included in the first time period, and the first voltage is determined based on a voltage of a reset floating diffusion node of the second pixel.