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公开(公告)号:US20210120201A1
公开(公告)日:2021-04-22
申请号:US16908980
申请日:2020-06-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jahyun KOO , Hyeokjong LEE
IPC: H04N5/3745 , H04N5/378 , H01L27/146 , H03M1/16
Abstract: An image sensor includes a pixel sensor outputting an analog sampling signal; a sampling unit comparing the sampling signal and a ramp signal, and outputting a comparison signal that is time-axis length information; and a counter counting a length of the comparison signal based on a clock signal and first and second complement control signals. The counter includes an AND gate ANDing the comparison signal and the clock signal; and a counting unit triggered at a falling edge of the AND gate output to output a count value. The counting unit includes a complement operation controller storing an inverted count value that is an inversion of the count value in response to the first complement control signal, and outputting the inverted count value in response to the second complement control signal; and a D-flip-flop that is set or reset depending on the inverted count value, and outputs the count value.
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公开(公告)号:US20240430598A1
公开(公告)日:2024-12-26
申请号:US18741222
申请日:2024-06-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Soonik CHO , Jahyun KOO , Dahsom KIM , Donghoon SUNG , Seokyong HONG
Abstract: An image sensor includes a pixel array, a ramp signal generating circuit configured to output a first reference ramp signal of a first slope as a first ramp signal in a first period and a second reference ramp signal of a second slope as the first ramp signal in a second period, an offset voltage sampling circuit configured to, to sample an offset voltage based on a DC level of the first reference ramp signal, to output the first ramp signal in the first period, and to output a signal obtained by adding the offset voltage to the first ramp signal as a second ramp signal in the second period, a buffer configured to buffer the first ramp signal and the second ramp signal, and an ADC circuit configured to compare a pixel signal from the pixel array with the first ramp signal or the second ramp signal.
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公开(公告)号:US20240365026A1
公开(公告)日:2024-10-31
申请号:US18383070
申请日:2023-10-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yooseung JUNG , Seokyong HONG , Jahyun KOO , Junyoung KIL , Dahsom KIM
IPC: H04N25/78 , H04N25/709 , H04N25/76 , H04N25/77
CPC classification number: H04N25/78 , H04N25/709 , H04N25/77 , H04N25/7795
Abstract: An image sensor device includes a first pixel located at a first row, a first select transistor, a second pixel located at a second row, a second select transistor, the second row being different from the first row, and a column line connected to both the first pixel and the second pixel, and during a first time period, a floating diffusion node of the first pixel is reset, and during a second time period, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor, the second time period is included in the first time period, and the first voltage is determined based on a voltage of a reset floating diffusion node of the second pixel.
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