公开(公告)号：US20240203872A1

公开(公告)日：2024-06-20

申请号：US18590793

申请日：2024-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghun Lim ,  Wookyung You ,  Kyoungwoo Lee ,  Juyoung Jung ,  Il Sup Kim ,  Chin Kim ,  Kyoungpil Park ,  Jinhyung Park

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/06

CPC classification number: H01L23/5228 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  H01L27/0688

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer, and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.

公开(公告)号：US11948883B2

公开(公告)日：2024-04-02

申请号：US17221191

申请日：2021-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghun Lim ,  Wookyung You ,  Kyoungwoo Lee ,  Juyoung Jung ,  Il Sup Kim ,  Chin Kim ,  Kyoungpil Park ,  Jinhyung Park

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/06 ,  H01L49/02

CPC classification number: H01L23/5228 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  H01L27/0688

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.