公开(公告)号：US20200027786A1

公开(公告)日：2020-01-23

申请号：US16282441

申请日：2019-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun LEE ,  Sung-Woo KANG ,  Keun-Hee BAI ,  Hak-Yoon AHN ,  Seong-Han OH ,  Young-Mook OH

IPC: H01L21/768 ,  H01L27/11 ,  H01L27/088 ,  H01L23/535 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8234

Abstract: A semiconductor device includes gates extending in a first direction on a substrate, each gate of the gates including a gate insulation layer, a gate electrode, and a first spacer, first contact plugs contacting the substrate between adjacent ones of the gates, the first contact plugs being spaced apart from sidewalls of corresponding ones of the gates, a second contact plug contacting an upper surface of a corresponding gate electrode, the second contact plug being between first contact plugs, and an insulation spacer in a gap between the second contact plug and an adjacent first contact plug, the insulation spacer contacting sidewalls of the second contact plug and the adjacent first contact plug, and upper surfaces of the second contact plug and the adjacent first contact plug being substantially coplanar with each other.