公开(公告)号：US20200027786A1

公开(公告)日：2020-01-23

申请号：US16282441

申请日：2019-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun LEE ,  Sung-Woo KANG ,  Keun-Hee BAI ,  Hak-Yoon AHN ,  Seong-Han OH ,  Young-Mook OH

IPC: H01L21/768 ,  H01L27/11 ,  H01L27/088 ,  H01L23/535 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8234

Abstract: A semiconductor device includes gates extending in a first direction on a substrate, each gate of the gates including a gate insulation layer, a gate electrode, and a first spacer, first contact plugs contacting the substrate between adjacent ones of the gates, the first contact plugs being spaced apart from sidewalls of corresponding ones of the gates, a second contact plug contacting an upper surface of a corresponding gate electrode, the second contact plug being between first contact plugs, and an insulation spacer in a gap between the second contact plug and an adjacent first contact plug, the insulation spacer contacting sidewalls of the second contact plug and the adjacent first contact plug, and upper surfaces of the second contact plug and the adjacent first contact plug being substantially coplanar with each other.

公开(公告)号：US20180190780A1

公开(公告)日：2018-07-05

申请号：US15652396

申请日：2017-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bok-Young LEE ,  Sung-Woo KANG ,  Sang-Hyun LEE ,  Hak-Yoon AHN ,  Young-Mook OH ,  In-Keun LEE ,  Seong-Han OH ,  Young-Hun CHOI

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L21/8234 ,  H01L23/535 ,  H01L27/088

CPC classification number: H01L29/41791 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/535 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.