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公开(公告)号：US20180012737A1
公开(公告)日：2018-01-11
申请号：US15402749
申请日：2017-01-10
Applicant: Samsung Electronics Co., Ltd. , Nanotech Inc.
Inventor： Pyung Moon , Sung Ho Kang , Ki Chul Kim , Un Ki Kim , Yong Hun Lee , Jae Hee Lee , Yong Seok Song , Hang Mook Park , Je Hoon Oh
CPC classification number: H01J37/32935 , H05B37/0227
Abstract: A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.
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公开(公告)号：US09316789B2
公开(公告)日：2016-04-19
申请号：US14796523
申请日：2015-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ki Chul Kim , Bong Jin Kuh , Jung Yun Won , Eun Ha Lee , Han Mei Choi
CPC classification number: G02B6/13 , G02B6/122 , G02B6/124 , G02B6/131 , G02B6/132 , G02B2006/12061 , G02B2006/121 , G02B2006/12107 , G02B2006/12147 , G02F1/025 , G02F1/035 , H01L29/66477
Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation .
Abstract translation: 半导体器件包括单晶衬底，电子元件和光学元件。 电元件设置在单晶衬底上。 电气元件包括以晶体取向<110>延伸的栅极电极和与栅电极相邻的源极和漏极区域。 源极区域和漏极区域布置在基本上垂直于栅电极延伸的方向的方向上。 光学元件设置在单晶衬底上。 光学元件包括以晶体取向<010>延伸的光波导。
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公开(公告)号：US10262841B2
公开(公告)日：2019-04-16
申请号：US15402749
申请日：2017-01-10
Applicant: Samsung Electronics Co., Ltd. , Nanotech Inc.
Inventor： Pyung Moon , Sung Ho Kang , Ki Chul Kim , Un Ki Kim , Yong Hun Lee , Jae Hee Lee , Yong Seok Song , Hang Mook Park , Je Hoon Oh
Abstract: A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.
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