公开(公告)号：US20220139912A1

公开(公告)日：2022-05-05

申请号：US17577549

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yong KWON ,  Byoung-Gi KIM ,  Ki Hwan LEE ,  Jung Han LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

公开(公告)号：US20230402456A1

公开(公告)日：2023-12-14

申请号：US18165486

申请日：2023-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoo Ri SUNG ,  Ju Youn KIM ,  Myung Soo SEO ,  Ki Hwan LEE

IPC: H01L27/092 ,  H01L21/8238

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/823864

Abstract: A semiconductor device includes a substrate that includes a first region and a second region, a first active pattern on the first region and that extends in a first horizontal direction, a second active pattern on the second region and that extends in the first horizontal direction, a first etch stop layer on the first active pattern, a second etch stop layer on the second active pattern, a plurality of first nanosheets on the first etch stop layer and that are stacked in a vertical direction and include silicon germanium (SiGe), a plurality of second nanosheets on the second etch stop layer and that are stacked in the vertical direction, a first gate electrode on the first etch stop layer and that extends in a second horizontal direction, and a second gate electrode disposed on the second etch stop layer and that extends in the second horizontal direction.