公开(公告)号：US20220139912A1

公开(公告)日：2022-05-05

申请号：US17577549

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yong KWON ,  Byoung-Gi KIM ,  Ki Hwan LEE ,  Jung Han LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

公开(公告)号：US20190189804A1

公开(公告)日：2019-06-20

申请号：US16044691

申请日：2018-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Gun YOU ,  Dong Hyun KIM ,  Byoung-Gi KIM ,  Yun Suk NAM ,  Yeong Min JEON ,  Sung Chul PARK ,  Dae Won HA

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/762 ,  H01L23/532 ,  H01L29/06

CPC classification number: H01L29/7855 ,  H01L21/762 ,  H01L21/823821 ,  H01L21/823864 ,  H01L23/5329 ,  H01L29/0642 ,  H01L29/6681

Abstract: A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.

公开(公告)号：US20200243684A1

公开(公告)日：2020-07-30

申请号：US16848145

申请日：2020-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Gun YOU ,  Dong Hyun KIM ,  Byoung-Gi KIM ,  Yun Suk NAM ,  Yeong Min JEON ,  Sung Chul PARK ,  Dae Won HA

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/66 ,  H01L23/532 ,  H01L29/06 ,  H01L29/165

Abstract: A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.