公开(公告)号：US20230069868A1

公开(公告)日：2023-03-09

申请号：US17698476

申请日：2022-03-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jongcheon KIM ,  Hyunchul LEE ,  Ki-Jeong KIM ,  Donghwi SHIN ,  Hyun-Sil HONG

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/027 ,  H01L23/522 ,  H01L23/528

摘要： A method of fabricating a semiconductor device and a device fabricated thereby, the method including sequentially stacking an interlayer insulating layer, a porous dielectric layer, a first mask layer, and a second mask layer on a substrate; etching the second mask layer to form preliminary mask patterns; etching the preliminary mask patterns to form second mask patterns; etching the first mask layer using the second mask patterns as an etch mask to form first mask patterns; etching the porous dielectric layer using the first mask patterns as an etch mask to form grooves; and forming interconnection patterns in the grooves, respectively, wherein the porous dielectric layer includes SiOCH, and the first mask layer includes carbon-free silicon oxide (SiO2).

公开(公告)号：US20230013061A1

公开(公告)日：2023-01-19

申请号：US17668452

申请日：2022-02-10

申请人： Samsung Electronics Co., Ltd.

发明人： Hyunchul LEE ,  Ki-Jeong KIM ,  Hwan LIM ,  Hyun-Sil HONG

IPC分类号： H01L21/762 ,  H01L29/423 ,  H01L21/02 ,  H01L27/108

摘要： A semiconductor device includes a substrate having one or more inner surfaces defining trenches that define an active pattern of the substrate, the trenches including a first trench and a second trench which have different widths, a device isolation layer on the substrate such that the device isolation layer at least partially fills the trenches, and a word line intersecting the active pattern. The device isolation layer includes a first isolation pattern covering a portion of the second trench, a second isolation pattern on the first isolation pattern and covering a remaining portion of the second trench, and a filling pattern filling the first trench under the word line. A top surface of the second isolation pattern is located at a higher level than a top surface of the filling pattern.