公开(公告)号：US20200027986A1

公开(公告)日：2020-01-23

申请号：US16587227

申请日：2019-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sug-Hyun Sung ,  Jung-gun YOU ,  Gi-gwan PARK ,  Ki-il KIM

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/092 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8238

Abstract: An integrated circuit device includes a fin-type active area protruding from a substrate; a plurality of liners sequentially covering lower side walls of the fin-type active area; a device isolation layer covering the lower side walls of the fin-type active area with the plurality of liners between the device isolation layer and the fin-type active area; and a gate insulating layer extending to cover a channel region of the fin-type active area, the plurality of liners, and the device isolation layer, and including protrusions located on portions of the gate insulating layer which cover the plurality of liners.

公开(公告)号：US20170062613A1

公开(公告)日：2017-03-02

申请号：US15223332

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sug-hyun Sung ,  Jung-gun YOU ,  Gi-gwan PARK ,  Ki-il KIM

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/762 ,  H01L29/06 ,  H01L27/092

CPC classification number: H01L29/7843 ,  H01L21/76224 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7851 ,  H01L29/7854

Abstract: An integrated circuit device includes a fin-type active area protruding from a substrate; a plurality of liners sequentially covering lower side walls of the fin-type active area; a device isolation layer covering the lower side walls of the fin-type active area with the plurality of liners between the device isolation layer and the fin-type active area; and a gate insulating layer extending to cover a channel region of the fin-type active area, the plurality of liners, and the device isolation layer, and including protrusions located on portions of the gate insulating layer which cover the plurality of liners.

Abstract translation: 集成电路器件包括从衬底突出的鳍式有源区; 多个衬垫，其顺序地覆盖所述翅片型有源区的下侧壁; 所述器件隔离层覆盖所述翅片型有源区的下侧壁，所述多个衬垫位于所述器件隔离层和所述翅片型有源区之间; 以及栅极绝缘层，其延伸以覆盖鳍状有源区域的沟道区域，多个衬垫和器件隔离层，并且包括位于覆盖多个衬垫的栅极绝缘层的部分上的突起。

公开(公告)号：US20220336582A1

公开(公告)日：2022-10-20

申请号：US17402214

申请日：2021-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gunho JO ,  Ki-il KIM ,  Byounghak HONG ,  Kang-ill SEO

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L27/088 ,  H01L29/66

Abstract: A multi-stack semiconductor device includes: a substrate; and a plurality of multi-stack transistor structures arranged on the substrate in a channel width direction, wherein the multi-stack transistor structure include at least one lower transistor structure and at least one upper transistor structure stacked above the lower transistor structure, wherein the lower and upper transistor structures include at least one channel layer as a current channel, wherein the lower transistor structures of at least two multi-stack transistor structures have different channel-layer widths.

公开(公告)号：US20180331220A1

公开(公告)日：2018-11-15

申请号：US16028918

申请日：2018-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sug-Hyun Sung ,  Jung-gun YOU ,  Gi-gwan PARK ,  Ki-il KIM

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/06

CPC classification number: H01L29/7843 ,  H01L21/76224 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7851 ,  H01L29/7854

Abstract: An integrated circuit device includes a fin-type active area protruding from a substrate; a plurality of liners sequentially covering lower side walls of the fin-type active area; a device isolation layer covering the lower side walls of the fin-type active area with the plurality of liners between the device isolation layer and the fin-type active area; and a gate insulating layer extending to cover a channel region of the fin-type active area, the plurality of liners, and the device isolation layer, and including protrusions located on portions of the gate insulating layer which cover the plurality of liners.