公开(公告)号：US20170117140A1

公开(公告)日：2017-04-27

申请号：US15296220

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk TAK ,  Tae-jong LEE ,  Bon-young KOO ,  Ki-yeon PARK ,  Sung-hyun CHOI

IPC: H01L21/02 ,  H01L29/49 ,  C23C16/455 ,  H01L27/092 ,  H01L27/11 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

公开(公告)号：US20190287797A1

公开(公告)日：2019-09-19

申请号：US16422375

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk TAK ,  Tae-jong LEE ,  Bon-young KOO ,  Ki-yeon PARK ,  Sung-hyun CHOI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  H01L29/66 ,  H01L29/49 ,  H01L27/11 ,  H01L27/092

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.