公开(公告)号：US20140139900A1

公开(公告)日：2014-05-22

申请号：US13971986

申请日：2013-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Jae SHIN ,  Jin-Kwon BOK ,  Beom-Suk LEE ,  Kwan-Sik CHO ,  Ho-Chul JI ,  Sang-Hun CHOI ,  Kyoung-Ho HA

IPC: G02F1/01

CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2201/58 ,  G02F2203/15

Abstract: A wavelength tunable optical transmitter includes a first waveguide receiving incident light through an input port and outputting the incident light to a first output port, a resonant modulator adjacent to the first waveguide and whose resonant wavelength is variable, and a second waveguide disposed optically in parallel to the first waveguide and outputting emitted light to a second output port. The resonant modulator includes a silicon resonator constituted by a crystallized silicon film in the form of a closed loop between the first and second waveguides, a first electrode within the silicon resonator and constituted by a silicon film of a first conductivity type, and a second electrode extending alongside part of the outer circumferential surface of the silicon resonator and constituted by a silicon film of a second conductivity type.

Abstract translation: 波长可调光发射机包括：第一波导，其通过输入端口接收入射光并将入射光输出到第一输出端口;谐振调制器，其邻近第一波导并且其谐振波长是可变的;以及第二波导，光学并行布置 到第一波导并将发射的光输出到第二输出端口。 谐振调制器包括由第一和第二波导之间的闭环形式的结晶硅膜构成的硅谐振器，硅谐振器内的由第一导电类型的硅膜构成的第一电极和第二电极 沿着硅谐振器的外周面的一部分延伸并由第二导电类型的硅膜构成。

公开(公告)号：US20140212087A1

公开(公告)日：2014-07-31

申请号：US14163069

申请日：2014-01-24

Applicant: Samsung Electronics Co., Ltd

Inventor： Kwan-Sik CHO ,  Jung-Hye KIM ,  Yong-Hwack SHIN

IPC: G02B6/136

CPC classification number: G02B6/136 ,  G02B6/43 ,  H01L27/0617 ,  H01L27/10894 ,  H01L27/10897

Abstract: A method of manufacturing a semiconductor apparatus includes forming a gate structure and an etch stop layer structure on a substrate including first and second regions. The gate structure is formed in the first region, and the etch stop layer structure is formed in the second region. A first insulating interlayer is formed on the substrate to cover the gate structure and the etch stop layer structure. The first insulating interlayer is partially removed to expose the etch stop layer structure. The exposed etch stop layer is removed to expose the substrate. An optical device is formed on the exposed substrate.

Abstract translation: 制造半导体器件的方法包括在包括第一和第二区域的衬底上形成栅极结构和蚀刻停止层结构。 栅极结构形成在第一区域中，并且蚀刻停止层结构形成在第二区域中。 在衬底上形成第一绝缘中间层以覆盖栅极结构和蚀刻停止层结构。 部分去除第一绝缘中间层以暴露蚀刻停止层结构。 去除暴露的蚀刻停止层以暴露衬底。 在曝光的基板上形成光学器件。