公开(公告)号：US20140139900A1

公开(公告)日：2014-05-22

申请号：US13971986

申请日：2013-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Jae SHIN ,  Jin-Kwon BOK ,  Beom-Suk LEE ,  Kwan-Sik CHO ,  Ho-Chul JI ,  Sang-Hun CHOI ,  Kyoung-Ho HA

IPC: G02F1/01

CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2201/58 ,  G02F2203/15

Abstract: A wavelength tunable optical transmitter includes a first waveguide receiving incident light through an input port and outputting the incident light to a first output port, a resonant modulator adjacent to the first waveguide and whose resonant wavelength is variable, and a second waveguide disposed optically in parallel to the first waveguide and outputting emitted light to a second output port. The resonant modulator includes a silicon resonator constituted by a crystallized silicon film in the form of a closed loop between the first and second waveguides, a first electrode within the silicon resonator and constituted by a silicon film of a first conductivity type, and a second electrode extending alongside part of the outer circumferential surface of the silicon resonator and constituted by a silicon film of a second conductivity type.

Abstract translation: 波长可调光发射机包括：第一波导，其通过输入端口接收入射光并将入射光输出到第一输出端口;谐振调制器，其邻近第一波导并且其谐振波长是可变的;以及第二波导，光学并行布置 到第一波导并将发射的光输出到第二输出端口。 谐振调制器包括由第一和第二波导之间的闭环形式的结晶硅膜构成的硅谐振器，硅谐振器内的由第一导电类型的硅膜构成的第一电极和第二电极 沿着硅谐振器的外周面的一部分延伸并由第二导电类型的硅膜构成。

公开(公告)号：US20210011231A1

公开(公告)日：2021-01-14

申请号：US17037864

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun Yeong CHO ,  Ho-Chul JI

IPC: G02B6/42 ,  H01L31/0232 ,  G02B6/12

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

公开(公告)号：US20190013870A1

公开(公告)日：2019-01-10

申请号：US15889449

申请日：2018-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Chul JI ,  Keun Yeong CHO

IPC: H04B10/516 ,  G02B6/42 ,  G02F1/01 ,  H04Q11/00

CPC classification number: H04B10/032 ,  H04Q11/00 ,  H04Q11/0062 ,  H04Q2011/0081

Abstract: A photonic integrated circuit includes a main light source, a redundant light source, a controller, an optical switch, and a modulator. The main light source outputs main light through a main light input waveguide. The redundant light source outputs redundant light through a redundant light transmission waveguide. The controller generates a first switch signal based on a fault state of the main light source. The optical switch selectively provides the redundant light from the redundant light transmission waveguide to a redundant light input waveguide based on the first switch signal. The modulator modulates main light from the main light input waveguide or redundant light from the redundant light input waveguide and outputs a first optical signal.

公开(公告)号：US20140270632A1

公开(公告)日：2014-09-18

申请号：US14206258

申请日：2014-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Chul JI ,  Seung-Hyuk Chang

IPC: G02B6/12

CPC classification number: G02B6/4206 ,  G02B6/4203 ,  G02B6/4214

Abstract: Integrated circuit device packages including optical elements are provided. The integrated circuit device package may include an integrated circuit device and a conductive pad on a first surface of the integrated circuit device. The conductive pad may be electrically connected to the integrated circuit device and may be configured to transmit an electrical signal. The integrated circuit device package may also include an optical element in the integrated circuit device and the optical element may be configured to transmit an optical signal through a second surface of the integrated circuit device that is opposite the first surface of the integrated circuit device.

Abstract translation: 提供了包括光学元件的集成电路器件封装。 集成电路器件封装可以包括在集成电路器件的第一表面上的集成电路器件和导电焊盘。 导电焊盘可以电连接到集成电路器件，并且可以被配置为传输电信号。 集成电路器件封装还可以包括集成电路器件中的光学元件，并且光学元件可以被配置为通过与集成电路器件的第一表面相对的集成电路器件的第二表面传输光信号。

公开(公告)号：US20220352216A1

公开(公告)日：2022-11-03

申请号：US17548712

申请日：2021-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Ho JANG ,  Seung Kuk KANG ,  Hae Sung JUNG ,  Kwan Sik CHO ,  Ho-Chul JI

IPC: H01L27/146

Abstract: An image sensor includes a substrate having first and second surfaces and first and second regions. Unit pixels including photoelectric conversion layers are arranged inside the first region. A pixel separation pattern extends from the first surface to the second surface in the first region, separates each of the unit pixels, and includes a pixel separation spacer film and a pixel separation filling film. A dummy pixel separation pattern extends from the first surface to the second surface in the second region, and includes a dummy pixel separation filling film. A wiring structure disposed on the second surface includes an inter-wiring insulating film and a first wiring. A first contact directly connects the dummy pixel separation filling film and connects the dummy pixel separation filling film to the first wiring. A height of the pixel separation filling film is greater than a height of the dummy pixel separation filling film.

公开(公告)号：US20190319139A1

公开(公告)日：2019-10-17

申请号：US16211344

申请日：2018-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun Yeong CHO ,  Ho-Chul JI

IPC: H01L31/0232 ,  H01L31/0216

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

公开(公告)号：US20190317282A1

公开(公告)日：2019-10-17

申请号：US16217711

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Yeong CHO ,  Ho-Chul JI

IPC: G02B6/42

Abstract: Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.