公开(公告)号：US11757040B2

公开(公告)日：2023-09-12

申请号：US17569952

申请日：2022-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deokhan Bae ,  Juhun Park ,  Myungyoon Um ,  Kwangyong Jang

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/417 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/7851 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/41725 ,  H01L29/66545

Abstract: An integrated circuit device includes a fin-type active region extending on a substrate in a first horizontal direction, a gate line extending on the fin-type active region in a second horizontal direction, first and second source/drain regions arranged on the fin-type active region; a first source/drain contact pattern connected to the first source/drain region and including a first segment having a first height in a vertical direction, a second source/drain contact pattern connected to the second source/drain region and including a second segment having a second height less than the first height in the vertical direction, and an insulating capping line extending on the gate line in the second horizontal direction and including an asymmetric capping portion between the first segment and the second segment, the asymmetric capping portion having a variable thickness in the first horizontal direction.

公开(公告)号：US11251306B2

公开(公告)日：2022-02-15

申请号：US17028191

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deokhan Bae ,  Juhun Park ,  Myungyoon Um ,  Kwangyong Jang

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/66 ,  H01L29/417 ,  H01L21/8234

Abstract: An integrated circuit device includes a fin-type active region extending on a substrate in a first horizontal direction, a gate line extending on the fin-type active region in a second horizontal direction, first and second source/drain regions arranged on the fin-type active region; a first source/drain contact pattern connected to the first source/drain region and including a first segment having a first height in a vertical direction, a second source/drain contact pattern connected to the second source/drain region and including a second segment having a second height less than the first height in the vertical direction, and an insulating capping line extending on the gate line in the second horizontal direction and including an asymmetric capping portion between the first segment and the second segment, the asymmetric capping portion having a variable thickness in the first horizontal direction.