公开(公告)号：US20240055482A1

公开(公告)日：2024-02-15

申请号：US18193758

申请日：2023-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok Hyeon YOON ,  Kyo-Wook LEE ,  Seung Hun LEE ,  Seung Han PARK

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/786 ,  H01L23/48 ,  H01L29/66 ,  H01L29/775 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/78696 ,  H01L23/481 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/42392 ,  H01L29/41733

Abstract: A semiconductor device including: first and second cell regions; a substrate including first and second surfaces; first to third active patterns extending in a first horizontal direction in the first cell region, the first to third active patterns spaced apart from each other in a second horizontal direction; a fourth active pattern extending in the first horizontal direction in the second cell region, the fourth active pattern is aligned with the second active pattern in the first horizontal direction; an active cut separating the second and fourth active patterns; a source/drain region on the second active pattern; a buried rail extending in the first horizontal direction on the second surface of the substrate, the first buried rail overlaps each of the second and fourth active patterns in a vertical direction; and a source/drain contact penetrating the substrate and second active pattern and connecting the source/drain region to the buried rail.