公开(公告)号：US10249667B2

公开(公告)日：2019-04-02

申请号：US15926371

申请日：2018-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/335 ,  H04N5/232

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

公开(公告)号：US11488996B2

公开(公告)日：2022-11-01

申请号：US16824265

申请日：2020-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/335 ,  H04N5/232

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

公开(公告)号：US10608033B2

公开(公告)日：2020-03-31

申请号：US16284703

申请日：2019-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/335 ,  H04N5/232

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

公开(公告)号：US09947707B2

公开(公告)日：2018-04-17

申请号：US14836402

申请日：2015-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

IPC: H01L27/146 ,  H04N5/232 ,  H04N5/335 ,  H04N5/369

CPC classification number: H01L27/1463 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14649 ,  H01L27/14687 ,  H01L27/14689 ,  H04N5/23212 ,  H04N5/335 ,  H04N5/3696

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.