公开(公告)号：US12010840B2

公开(公告)日：2024-06-11

申请号：US17013726

申请日：2020-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Leeeun Ku ,  Yuna Lee ,  Sunyoung Kim ,  Kyungjae Park ,  Jonghyun Park ,  Bora Lee ,  Jongho Lim

IPC: H01L27/115 ,  H01L23/522 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B43/27 ,  H01L23/5226 ,  H10B43/10

Abstract: A vertical type non-volatile memory device includes a substrate having a cell array area of a block unit and an extension area, a vertical contact disposed in the extension area, a plurality of vertical channel structures provided on the substrate in the cell array area, a plurality of dummy channel structures provided on the substrate in the extension area, and a plurality of gate electrode layers and a plurality of interlayer insulation layers stacked alternately on the substrate. In an electrode pad connected to the vertical contact, dummy channel structures are disposed at both sides of the vertical contact and a horizontal cross-sectional surface of each of the plurality of dummy channel structures has a shape which is longer in one direction.