公开(公告)号：US20170162363A1

公开(公告)日：2017-06-08

申请号：US15286678

申请日：2016-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN KWAN KIM ,  MIN KOOK KIM ,  JUNG SOO KIM ,  YU SIN YANG ,  CHUNG SAM JUN

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/222 ,  G01N23/2251 ,  G01N2223/418 ,  G01N2223/423 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0473 ,  H01J2237/226 ,  H01J2237/24485 ,  H01J2237/2803 ,  H01J2237/2804 ,  H01J2237/2805 ,  H01J2237/2806

Abstract: A structure analysis method using a scanning electron microscope includes irradiating a sample with an electron beam having a first landing energy to obtain a first image at a first depth of the sample and accelerating the electron beam to have a second landing energy higher than the first landing energy to obtain a second image at a second depth of the sample.