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1.发明申请ALUMINUM PRECURSOR, METHOD OF FORMING A THIN FILM AND METHOD OF FORMING A CAPACITOR USING THE SAME 有权铝前驱体，形成薄膜的方法和使用其形成电容器的方法公开(公告)号：US20140242263A1
公开(公告)日：2014-08-28
申请号：US14176173
申请日：2014-02-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Chul YOUN , Atsushi SAKURAI , Masako HATASE , Youn-Joung CHO , Ji-Na KANG , Naoki YAMADA , Jung-Sik CHOI
IPC: H01G13/00
CPC classification number: H01G4/33 , H01G4/085 , H01G4/1272 , H01L27/10852 , H01L28/40
Abstract: An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3.
Abstract translation: 铝化合物由下式1表示。在式1中，X是由下式2或式3表示的官能团。
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