公开(公告)号：US20170178961A1

公开(公告)日：2017-06-22

申请号：US15298275

申请日：2016-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Takanori KOIDE ,  Naoki YAMADA ,  Jae-soon LIM ,  Tsubasa SHIRATORI ,  Youn-joung CHO

IPC: H01L21/8234 ,  H01L27/06 ,  C23C16/455 ,  C01B21/06 ,  C09D5/24 ,  B05D1/00 ,  H01L21/02 ,  H01L27/088

CPC classification number: H01L21/02183 ,  C07F9/00 ,  C23C16/16 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45525 ,  H01L21/0215 ,  H01L21/0228 ,  H01L28/00

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US20190292207A1

公开(公告)日：2019-09-26

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Haruyoshi SATO ,  Naoki YAMADA ,  Hiroyuki UCHIUZOU

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US20190152996A1

公开(公告)日：2019-05-23

申请号：US16251236

申请日：2019-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Kazuki HARANO ,  Haruyoshi SATO ,  Tsubasa SHIRATORI ,  Naoki YAMADA

IPC: C07F5/00 ,  C23C16/455 ,  C23C16/34 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

公开(公告)号：US20140242263A1

公开(公告)日：2014-08-28

申请号：US14176173

申请日：2014-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Chul YOUN ,  Atsushi SAKURAI ,  Masako HATASE ,  Youn-Joung CHO ,  Ji-Na KANG ,  Naoki YAMADA ,  Jung-Sik CHOI

IPC: H01G13/00

CPC classification number: H01G4/33 ,  H01G4/085 ,  H01G4/1272 ,  H01L27/10852 ,  H01L28/40

Abstract: An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3.

Abstract translation: 铝化合物由下式1表示。在式1中，X是由下式2或式3表示的官能团。

公开(公告)号：US20190074175A1

公开(公告)日：2019-03-07

申请号：US16183927

申请日：2018-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Takanori KOIDE ,  Naoki YAMADA ,  Jae-soon LIM ,  Tsubasa SHIRATORI ,  Youn-joung CHO

IPC: H01L21/02 ,  H01L49/02 ,  C23C16/455 ,  C07F9/00 ,  C23C16/44 ,  C23C16/40 ,  C23C16/34 ,  C23C16/16

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):