公开(公告)号：US20190385918A1

公开(公告)日：2019-12-19

申请号：US16245686

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Young CHOI ,  Zhan ZHAN ,  Min-Seob KIM ,  Ju-Hyun KIM ,  Sung-Gun KANG ,  Hwa-Sung RHEE

IPC: H01L21/66 ,  G01R31/26

Abstract: A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.