公开(公告)号：US20190385918A1

公开(公告)日：2019-12-19

申请号：US16245686

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Young CHOI ,  Zhan ZHAN ,  Min-Seob KIM ,  Ju-Hyun KIM ,  Sung-Gun KANG ,  Hwa-Sung RHEE

IPC: H01L21/66 ,  G01R31/26

Abstract: A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.

公开(公告)号：US20180012814A1

公开(公告)日：2018-01-11

申请号：US15498924

申请日：2017-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Zhan ZHAN ,  Hwa Sung RHEE ,  Myung Jo CHUN

IPC: H01L21/66 ,  H01L27/02 ,  H01L27/06 ,  G01R31/26 ,  H01L29/861 ,  H01L29/66

CPC classification number: H01L22/32 ,  G01R31/2644 ,  G01R31/2884 ,  H01L22/14 ,  H01L22/34 ,  H01L27/0207 ,  H01L27/0255 ,  H01L27/0676 ,  H01L29/6609 ,  H01L29/861 ,  H01L29/8611

Abstract: A semiconductor device includes first and second pads separated from each other, first and second test elements connected to the first and second pads and connected to each other in parallel between the first and second pads, a first diode connected to the first test element in series, and a second diode connected to the second test element in series.